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参数资料
| 型号： | F29C51004T90TI |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| 中文描述： | 该F29C51004T/F29C51004B是一款高速524288 × 8位CMOS闪存 |
| 文件页数： | 1/16页 |
| 文件大小： | 100K |
| 代理商： | F29C51004T90TI |
SyncMOS
1
F29C51004T/F29C51004B
4 MEGABIT (524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
F29C51004T/F29C51004B
V1.0
November 1998
Features
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512Kx8-bit Organization
Address Access Time: 70, 90, 120 ns
Single 5V
±
10% Power Supply
Sector Erase Mode Operation
16KB Boot Block (lockable)
1K bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 20
Minimum 10,000 Erase-Program Cycles
Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 50
Hardware Data Protection
Low V
CC
Program Inhibit Below 3.5V
Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
CMOS and TTL Interface
Available in two versions
– F29C51004T (Top Boot Block)
– F29C51004B (Bottom Boot Block)
Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
μ
s (Max)
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μ
A (Max)
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Description
The F29C51004T/F29C51004B is a high speed
524,288 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The F29C51004T/F29C51004B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O
7
or by the Toggle Bit I/O
TheF29C51004T/F29C51004B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (F29C51004T) or the bottom (F29C51004B).
All inputs and outputs are CMOS and TTL
compatible.
The F29C51004T/F29C51004B is ideal for
applications that require updatable code and data
storage.
6
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Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Temperature
Mark
P
T
J
70
90
120
0
°
C to 70
°
C
Blank
–40
°
C to +85
°
C
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相关PDF资料 |
PDF描述 |
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| F29C51004T90J | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T90JI | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T90P | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T12PI | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T12T | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
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