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| 型号： | FALL2003 |
| 英文描述： | High Efficiency Diodes (HEDs); Surface Mount Type: Y; Package: M-FLAT; Number Of Pins: 2; Application Scope: Switching mode power supply; Internal Connection: Single; T RR (ns): (max 35); Repetitive Peak Reverse Voltage V_RRM Max (V): (max 3); I O (A): (max 200) |
| 中文描述： | 产品选型指南 |
| 文件页数： | 4/12页 |
| 文件大小： | 1551K |
| 代理商： | FALL2003 |
WJ Communications RF Semiconductors 401 River Oaks Parkway San Jose, California 95134-1916 1-800-951-4401
www.wj.com
The AG series are a broad family of general-purpose buffer amplifiers offering superior dynamic range in low-cost, surface mount
packages. The AG series are designed to provide broadband gain at frequencies from DC to 6 GHz. Targeted at telecommunication
infrastructure and CATV markets, they can be directly applied to various current and next generation system applications wherever
low-cost gain blocks are needed.
AMPLIFIERS (continued)
InGaP Gain Block
Amplifiers
Frequency Range
(MHz)
Gain (dB)
0.9GHz/1.9GHz
P1dB (dBm)
0.9GHz/1.9GHz
OIP3 (dBm)
0.9GHz/1.9GHz
Device
Voltage (V)
Current
(mA)
Package
Style
AG201
AG202
AG203
AG302
AG303
AG402
AG403
AG503
AG602
AG603
AG604
DC-6000
DC-6000
DC-6000
DC-6000
DC-6000
DC-6000
DC-6000
DC-6000
DC-6000
DC-6000
DC-6000
11.0
14.5
19.5
15.5
20.5
15.0
20.5
20.0
14.0
18.0
20.5
10.5
14.0
17.0
14.5
18.0
14.5
18.0
18.0
13.0
16.0
17.0
6.7 / 6.1
7.6 / 6.5
8.0 / 7.3
13.5 / 12.2
14.0 / 12.7
17.1 / 15.9
17.8 / 16.0
15.9 / 14.6
19.0 / 18.7
19.4 / 19.2
19.4 / 19.2
19.3
19.6
20.8 20.7
25.9 25.0
26.1
32.6
31.4
28.8
33.7
33.7
33.1
18.4
19.2
4.00
4.05
4.05
4.23
4.23
4.91
4.91
5.00
5.16
5.16
5.16
20
20
20
35
35
60
60
45
75
75
75
SOT-86 / SOT-363
SOT-86 / SOT-363
SOT-86 / SOT-363
SOT-86 / SOT-363
SOT-86 / SOT-363
SOT-86 / SOT-89
SOT-86 / SOT-89
SOT-86 / SOT-89
SOT-86 / SOT-89
SOT-86 / SOT-89
SOT-86 / SOT-89
24.8
29.6
28.5
27.8
33.5
33.4
33.1
WJ’s InGaP HBT technology enables these amplifiers to achieve broadband performance at power levels of 0.25–2 watts. The low-cost
surface mount package styles provide excellent thermal management while achieving superior linearity at given output power levels.
These devices deliver more power while still meeting exceptional ACPR performance. They are ideal for various current and next
generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA where high linearity and high power are required.
HBT AMPLIFIERS
HBT
Amplifiers
Frequency Range
(MHz)
Small Signal
Gain (dB)
Noise Figure
(dB)
P1dB
(dBm)
OIP3
(dBm)
VSWR
(I/O)
Device Voltage
(V)
Current
(mA)
Package
Style
AH110
NEW
50-2000
18
5.0
24
39
1.3 / 1.6
8
100
SOT-89
AH115
NEW
1800-2300
15
6.0
28
45
1.4 / 2.3
5
250
SOIC-8 (B)
AH116
NEW
800-1000
17
6.0
28
44
1.4 / 2.0
5
250
SOIC-8 (B)
AH117
NEW
400-2200
19
5.5
24
40
1.6 / 1.8
5
120
SOT-89
AH210
NEW
1700-2200
23
5.5
30
47
1.9 / 1.9
5
400
SOIC-8 (B)
AH215
NEW
400-2300
12
6.5
31
47
1.4 / 1.9
5
450
SOIC-8 (B)
AH312
NEW
400-2300
11
7.0
34
49
1.6 / 1.9
5
800
SOIC-8 (B)
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