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| 型号： | FAN3227CMX |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 19/26页 |
| 文件大小： | 0K |
| 描述： | IC GATE DVR DUAL 2A 8-SOIC |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 15ns |
| 电流 - 峰： | 3A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 1215 (CN2011-ZH PDF) |
| 其它名称： | FAN3227CMXDKR |
V DD Bypass Capacitor Guidelines
To enable this IC to turn a device on quickly, a local high-
frequency bypass capacitor C BYP with low ESR and ESL
should be connected between the VDD and GND pins
with minimal trace length. This capacitor is in addition to
bulk electrolytic capacitance of 10 μF to 47 μF commonly
found on driver and controller bias circuits.
A typical criterion for choosing the value of C BYP is to
keep the ripple voltage on the V DD supply to ≤ 5%. This
is often achieved with a value ≥ 20 times the equivalent
load capacitance C EQV , defined here as Q GATE /V DD .
Ceramic capacitors of 0.1 μF to 1 μF or larger are
common choices, as are dielectrics, such as X5R and
X7R with good temperature characteristics and high
pulse current capability.
If circuit noise affects normal operation, the value of
C BYP may be increased to 50-100 times the C EQV , or
C BYP may be split into two capacitors. One should be a
larger value, based on equivalent load capacitance, and
the other a smaller value, such as 1-10 nF mounted
closest to the VDD and GND pins to carry the higher
best results, make connections to all pins as short
and direct as possible.
? The FAN322x is compatible with many other
industry-standard drivers. In single input parts with
enable pins, there is an internal 100 k Ω resistor tied
to V DD to enable the driver by default; this should be
considered in the PCB layout.
? The turn-on and turn-off current paths should be
minimized, as discussed in the following section.
Figure 49 shows the pulsed gate drive current path
when the gate driver is supplying gate charge to turn the
MOSFET on. The current is supplied from the local
bypass capacitor, C BYP , and flows through the driver to
the MOSFET gate and to ground. To reach the high
peak currents possible, the resistance and inductance in
the path should be minimized. The localized C BYP acts
to contain the high peak current pulses within this driver-
MOSFET circuit, preventing them from disturbing the
sensitive analog circuitry in the PWM controller.
frequency components of the current pulses. The
bypass capacitor must provide the pulsed current from
both of the driver channels and, if the drivers are
switching simultaneously, the combined peak current
sourced from the C BYP would be twice as large as when
a single channel is switching.
Layout and Connection Guidelines
The FAN3226-26 family of gate drivers incorporates
fast-reacting input circuits, short propagation delays,
and powerful output stages capable of delivering current
peaks over 2 A to facilitate voltage transition times from
under 10 ns to over 150 ns. The following layout and
connection guidelines are strongly recommended:
PWM
C BYP
V DD
FAN322x
V DS
?
?
?
?
Keep high-current output and power ground paths
separate logic and enable input signals and signal
ground paths. This is especially critical when
dealing with TTL-level logic thresholds at driver
inputs and enable pins.
Keep the driver as close to the load as possible to
minimize the length of high-current traces. This
reduces the series inductance to improve high-
speed switching, while reducing the loop area that
can radiate EMI to the driver inputs and
surrounding circuitry.
If the inputs to a channel are not externally
connected, the internal 100 k Ω resistors indicated
on block diagrams command a low output. In noisy
environments, it may be necessary to tie inputs of
an unused channel to VDD or GND using short
traces to prevent noise from causing spurious
output switching.
Many high-speed power circuits can be susceptible
to noise injected from their own output or other
external sources, possibly causing output re-
triggering. These effects can be obvious if the
circuit is tested in breadboard or non-optimal circuit
layouts with long input, enable, or output leads. For
Figure 49. Current Path for MOSFET Turn-on
Figure 50 shows the current path when the gate driver
turns the MOSFET off. Ideally, the driver shunts the
current directly to the source of the MOSFET in a small
circuit loop. For fast turn-off times, the resistance and
inductance in this path should be minimized.
V DD V DS
C BYP
FAN322x
PWM
Figure 50. Current Path for MOSFET Turn-off
? 2007 Fairchild Semiconductor Corporation
FAN3226 / FAN3227 / FAN3228 / FAN3229 ? Rev. 1.1.0
19
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FAN3227CMX_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 2A High-Speed, Low-Side Gate Drivers |
| FAN3227CMX_F085 | 功能描述:功率驱动器IC Dual 2A L-Side Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FAN3227T | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:2A Low-Voltage PMOS-NMOS Bridge Driver |
| FAN3227TMPX | 功能描述:功率驱动器IC Dual 2A High-Speed Low-Side Gate RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| FAN3227TMX | 功能描述:功率驱动器IC dual 2A with non-inverting TTL RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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