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参数资料
| 型号： | FCD4N60TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 3.9A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 25V |
| 功率 - 最大： | 50W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FCD4N60TMDKR |
Package Marking and Ordering Information
Device Marking
FCD4N60
Device
FCD4N60TM
Package
D-PAK
Reel Size
380mm
Tape Width
16m
Quantity
2500
Electrical Characteristics T C = 25 o C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
BV DS
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V GS = 0 V, I D = 250 μ A, T C = 25 o C
V GS = 0 V, I D = 250 μ A, T C = 150 o C
I D = 1 mA, Referenced to 25 o C
V GS = 0 V, I D = 3.9 A
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
600
-
-
-
-
-
-
-
650
0.6
700
-
-
-
-
-
-
-
1
10
±100
V
V
V/ o C
V
? A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10 V, I D = 2.0 A
V DS = 40 V, I D = 2.0 A
3.0
-
-
-
1.0
3.2
5.0
1.2
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25 V, V GS = 0 V
f = 1.0 MHz
V DS = 480 V, V GS = 0 V, f = 1.0 MHz
V DS = 0 V to 400 V, V GS = 0 V
-
-
-
-
-
415
210
19.5
12
32
540
275
-
16
-
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 300 V, I D = 3.9 A
R G = 25 ?
(Note 4)
-
-
-
-
16
45
36
30
45
100
85
70
ns
ns
ns
ns
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 480 V, I D = 3.9 A,
V GS = 10 V
(Note 4)
-
-
-
12.8
2.4
7.1
16.6
-
-
nC
nC
nC
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
3.9
11.7
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 11 A
V GS = 0 V, I SD = 11 A
dI F /dt = 100 A/ ? s
-
-
-
-
277
2.07
1.4
-
-
V
ns
? C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I AS = 1.9 A, V DD = 50 V, R G = 25 ? , Starting T J = 25 ? C
3. I SD ? 3.9 A, di/dt ? 200 A/ ? s, V DD ? BV DSS , Starting T J = 25 ? C
4. Essentially Independent of Operating Temperature Typical Characteristics
?2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
2
www.fairchildsemi.com
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