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参数资料
| 型号： | FCP7N60_F080 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 7A TO-220 |
| 产品变化通告： | Product Discontinuation 14/Mar/2011 |
| 标准包装： | 50 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 25V |
| 功率 - 最大： | 83W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
November 2013
FCP7N60 / FCPF7N60
N-Channel SuperFET ? MOSFET
600 V, 7 A, 600 m Ω
Features
? 650 V @ T J = 150 o C
? Typ. R DS(on) = 530 m Ω
? Ultra Low Gate Charge (Typ. Q g = 23 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 60 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? LCD/LED/PDP TV
? Solar Inverter
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
D
G
S
TO-220F
Y-formed
G
S
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FCP7N60
600
FCPF7N60 /
FCPF7N60YDTU
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
7
4.4
7*
4.4*
A
A
I DM
Drain Current
- Pulsed
(Note 1)
21
21*
A
V GSS
Gate-Source voltage
± 30
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
230
7
8.3
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
83
0.67
31
0.25
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FCP7N60
1.5
62.5
FCPF7N60 /
FCPF7N60YDTU
4.0
62.5
Unit
° C/W
?2005 Fairchild Semiconductor Corporation
FCP7N60 / FCPF7N60 Rev. C1
1
www.fairchildsemi.com
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