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参数资料
| 型号： | FCPF11N60F |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 11A TO-220F |
| 标准包装： | 50 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 380 毫欧 @ 5.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 52nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1490pF @ 25V |
| 功率 - 最大： | 36W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FCP11N60F
Device
FCP11N60F
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
BV DS
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V GS = 0 V, I D = 250 μ A, T C = 25 o C
V GS = 0 V, I D = 250 μ A, T C = 150 o C
I D = 250 μ A, Referenced to 25 o C
V GS = 0 V, I D = 11 A
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
600
-
-
-
-
-
-
-
650
0.6
700
-
-
-
-
-
-
-
1
10
±100
V
V
V/ o C
V
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 5.5 A
V DS = 40 V, I D = 5.5 A
3.0
-
-
-
0.32
6
5.0
0.38
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25 V, V GS = 0 V
f = 1.0 MHz
V DS = 480 V, V GS = 0 V, f = 1.0 MHz
V DS = 0 V to 400 V, V GS = 0 V
-
-
-
-
-
1148
671
63
35
95
1490
870
82
-
-
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 300 V, I D = 11 A
R G = 25 Ω
(Note 4)
-
-
-
-
34
98
119
56
80
205
250
120
ns
ns
ns
ns
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 480 V, I D = 11 A,
V GS = 10 V
(Note 4)
-
-
-
40
7.2
21
52
-
-
nC
nC
nC
Drain-Source Diode Characteristics Maximum Ratings
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
11
33
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 11 A
V GS = 0 V, I SD = 11 A
dI F /dt = 100 A/ μ s
-
-
-
-
120
0.8
1.4
-
-
V
ns
μ C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. I AS = 5.5 A, V DD = 50 V, R G = 25 Ω, Starting T J = 25°C.
3. I SD ≤ 11 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?2010 Fairchild Semiconductor Corporation
FCP11N60F Rev. C2
2
www.fairchildsemi.com
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