参数资料
型号: FCPF20N60TYDTU
厂商: Fairchild Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: MOSFET N-CH 600V 20A TO-220F
标准包装: 50
系列: SuperFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 190 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 98nC @ 10V
输入电容 (Ciss) @ Vds: 3080pF @ 25V
功率 - 最大: 39W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
0.9
Notes :
1. V GS = 0 V
2. I D = 250 μ A
1.0
0.5
Notes :
1. V GS = 10 V
2. I D = 20 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T J , Junction Temperature [ ° C]
Figure 9-1. Maximum Safe Operating Area
for FCP20N60
Operation in This Area
T J , Junction Temperature [ ° C]
Figure 9-2. Maximum Safe Operating Area
for FCPF20N60
Operation in This Area
10
2
is Limited by R DS(on)
10
2
is Limited by R DS(on)
100 us
100 us
10
1
1 ms
10
1
1 ms
DC
10 ms
10 ms
100 ms
10
0
10
0
DC
Notes :
Notes :
10
10
-1
1. T C = 25 ° C
2. T J = 150 ° C
3. Single Pulse
-1
1. T C = 25 ° C
2. T J = 150 ° C
3. Single Pulse
10
10
10
10
10
10
10
10
-2
10
0
1
2
3
-2
10
0
1
2
3
V DS , Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
V DS , Drain-Source Voltage [V]
0
25
50
75
100
125
150
T C , Case Temperature [ ° C]
FCP20N60 / FCPF20N60 Rev. A 2
4
www.fairchildsemi.com
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