- 您现在的位置：买卖IC网 > PDF目录18572 > FCU5N60TU (Fairchild Semiconductor)MOSFET N-CH 600V 4.6A I-PAK PDF资料下载
参数资料
| 型号： | FCU5N60TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 4.6A I-PAK |
| 产品目录绘图： | I-PAK, I2PAK Pkg |
| 标准包装： | 70 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 950 毫欧 @ 2.3A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 600pF @ 25V |
| 功率 - 最大： | 54W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
December 2013
FCD5N60
N-Channel SuperFET ? MOSFET
600 V, 4.6 A, 950 m Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 810 m Ω
? Ultra Low Gate Charge (Typ. Q g = 16 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 32 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? LCD/LED TV and Monitor
? Lighting
? Solar Inverter
? AC-DC Power Supply
D
D
G
S
D-PAK
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
Parameter
FCD5N60TM /
FCD5N60TM_WS
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
600
4.6
2.9
V
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
13.8
±30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
159
4.6
5.4
4.5
54
0.43
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
Thermal Characteristics
Symbol
Parameter
FCD5N60TM /
FCD5N60TM_WS
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.3
83
o
C/W
?2008 Fairchild Semiconductor Corporation
FCD5N60 Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| ACH-12.000MHZ-EK | OSCILLATOR 12.000MHZ 5V 1/2-SIZE |
| ASFLMPC-33.333MHZ-Z-T | OSC 33.333 MHZ CMOS MEMS SMD |
| ACH-11.0592MHZ-EK | OSCILLATOR 11.0592MHZ 5V 1/2-SZ |
| 3352P-1-253LF | POT 25K OHM THUMBWHEEL CERM ST |
| GLAC22D | SWITCH TOP ROLLR ARM SNAP DPDT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FCU-7 | 功能描述:保险丝 FUSETRON DUAL-ELEMT RoHS:否 制造商:Littelfuse 产品:Surface Mount Fuses 电流额定值:0.5 A 电压额定值:600 V 保险丝类型:Fast Acting 保险丝大小/组:Nano 尺寸:12.1 mm L x 4.5 mm W 安装风格: 端接类型:SMD/SMT 系列:485 |
| FCU7N60 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FCU7N60TU | 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCU900N60Z | 功能描述:MOSFET Low Power Two-Input Logic Gate TinyLogic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCUPHBR-D | 制造商:FibreFab 功能描述: |
发布紧急采购，3分钟左右您将得到回复。