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参数资料
| 型号： | FCX1053A |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 75 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-89, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 83K |
| 代理商： | FCX1053A |
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - MARCH 1999
FEATURES
*
2W POWER DISSIPATION
*
10A Peak Pulse Current
*
Excellent HFE Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage E.g. 21mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat) 78mat 4.5A
Partmarking Detail -
053
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
VCEO
75
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current **
ICM
10
A
Continuous Collector Current
IC
3A
Power Dissipation at Tamb=25°C
Ptot
1
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
recommended Ptot calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1053A
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