参数资料
型号: FD1200030
厂商: Pericom
文件页数: 3/3页
文件大小: 0K
描述: OSC 12MHZ 3.3V SMD
标准包装: 100
系列: SaRonix-eCera™ FD
类型: XO(标准)
频率: 12MHz
功能: 三态(输出启用)
输出: CMOS
电源电压: 3.3V
频率稳定性: ±50ppm
工作温度: -40°C ~ 85°C
电流 - 电源(最大): 15mA
安装类型: 表面贴装
尺寸/尺寸: 0.197" L x 0.126" W(5.00mm x 3.20mm)
高度: 0.051"(1.30mm)
封装/外壳: 4-SMD,无引线(DFN,LCC)
包装: 散装
电流 - 电源(禁用)(最大): 10µA
3.3V CMOS Low Jitter XO
FD
FD Series Crystal Clock Oscillator (XO)
Legacy S1633 Series | 5.0 x 3.2mm
Test Circuit
Test Point
Power
Supply
0.1 μ F
or
0.01 μ F
4
1
3
2
15 pF
(Including probe
and fixture
capacitance)
Output Enable / Disable Function
Re ? ow Soldering Pro ? le
As per IPC/JEDEC J-STD-020C
260
1 to 3°C/sec max
Peak 260°C for 10 sec max
1 to 3°C/sec
217
Time
60 to 90 sec
4 to 6 minutes max
Reliability Test Ratings
This product is rated to meet the following test conditions:
Type
Mechanical
Mechanical
Mechanical
Mechanical
Mechanical
Mechanical
Environmental
Environmental
Environmental
Environmental
Parameter
Shock
Solderability
Terminal strength
Gross leak
Fine leak
Solvent resistance
Thermal shock
Moisture resistance
Vibration
Resistance to soldering heat
Test Condition
MIL-STD-883, Method 2002, Condition B
JESD22-B102-D Method 2 (Preconditioning E)
MIL-STD-883, Method 2004, Condition D
MIL-STD-883, Method 1014, Condition C
MIL-STD-883, Method 1014, Condition A2 (R 1 = 2x10 -8 atm cc/s)
MIL-STD-202, Method 215
MIL-STD-883, Method 1011, Condition A
MIL-STD-883, Method 1004
MIL-STD-883, Method 2007, Condition A
J-STD-020C Table 5-2 Pb-free devices (2 cycles max)
SaRonix-eCera? is a Pericom? Semiconductor company
?
US: 1-408-435-0800 TW: 886-3-4518888
?
www.saronix-ecera.com
All specifications are subject to change without notice.
FD 3.3V REV2008_DEC04_01.2
3
相关PDF资料
PDF描述
FCN1206A222J CAP FILM 2200PF 100VDC 1206
FCN1206A182J CAP FILM 1800PF 100VDC 1206
112TW401-3 SWITCH TOGGLE TW ON-ON DPDT
FCN1206A152J CAP FILM 1500PF 100VDC 1206
112TW401-1 SWITCH TOGGLE TW ON-OFF-ON DPDT
相关代理商/技术参数
参数描述
FD1200R12IE4_B1_S1 功能描述:IGBT 模块 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FD1200R17HP4-K_B2 制造商:Infineon Technologies AG 功能描述:
FD1200R17KE3-K 功能描述:IGBT 模块 N-CH 1.7KV 1.6KA RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FD1200R17KE3-K_B2 功能描述:IGBT 模块 N-CH 1.7KV 1.7KA RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FD12-101G 制造商:Halo Electronics Inc 功能描述:10BASE-T FILTER - Rail/Tube