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参数资料
| 型号： | FDB2570 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 22 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 81K |
| 代理商： | FDB2570 |
August 2001
2001 Fairchild Semiconductor Corporation
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
150V N-Channel PowerTrench
MOSFET
General Description
This
specifically for switching on the primary side in the
isolated DC/DC converter application. Any application
requiring a 150V MOSFETs with low on-resistance and
fast switching will benefit.
N-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
22 A, 150 V.
R
DS(ON)
= 80 m
@ V
GS
= 10 V
R
DS(ON)
= 90 m
@ V
GS
= 6 V
Low gate charge (40nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
175
°
C maximum junction temperature rating
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
Ratings
150
±
20
22
50
93
0.63
–65 to +175
Units
V
V
A
A
W
W
°
/C
°
C
(Note 1)
(Note 1)
Derate above 25
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
1.6
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB2570
FDB2570
FDP2570
FDP2570
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB2572 | 功能描述:MOSFET N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB2572_Q | 功能描述:MOSFET N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB-25P | 制造商:Hirose 功能描述: |
| FDB-25P(05) | 制造商:Hirose 功能描述: |
| FDB-25P0L2TI/1 | 制造商:Cinch Connectors 功能描述:25 way straight PCB filtered D plug,5A |
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