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参数资料
| 型号： | FDB2572 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 150V, 29A, 54mз |
| 中文描述： | 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 269K |
| 代理商： | FDB2572 |
2002 Fairchild Semiconductor Corporation
FDB2572 / FDP2572 Rev. B
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.1
1
10
100
1000
1
10
100
200
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
OPEAREA MAY BE
10
μ
s
10ms
1ms
DC
100
μ
s
0.1
1
10
100
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
10
20
30
40
50
60
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10
20
30
40
50
60
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 7V
V
GS
= 10V
40
50
55
60
0
10
I
D
, DRAIN CURRENT (A)
20
30
45
V
GS
= 6V
V
GS
= 10V
D
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=9A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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