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参数资料
| 型号： | FDB2670 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 200V N-Channel PowerTrench MOSFET |
| 中文描述： | 19 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | D2PAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 83K |
| 代理商： | FDB2670 |
FDP2670/FDB2670 Rev C1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= 100 V,
I
D
= 10 A
375
mJ
10
A
V
GS
= 0 V, I
D
= 250
μ
A
200
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
241
mV/
°
C
V
DS
= 160 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
4
4.5
V
Gate Threshold Voltage
–9
mV/
°
C
V
GS
= 10 V,
V
GS
= 10V, I
D
= 10 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 10 V,
I
D
= 10 A
98
205
130
285
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 10 A
20
A
S
24
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1320
71
24
pF
pF
pF
V
DS
= 100 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
14
5
26
23
27
7
10
25
10
41
37
38
ns
ns
ns
ns
nC
nC
nC
V
DD
= 100 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 100 V,
V
GS
= 10 V
I
D
= 10 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
19
A
V
SD
V
GS
= 0 V,
I
S
= 10 A
(Note 2)
0.8
1.3
V
Notes:
1. Calculated continuous current based on maximum allowable junction temperature.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3. I
SD
≤
3A, di/dt
≤
100A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
F
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