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参数资料
| 型号： | FDB6644S |
| 元件分类： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 2/11页 |
| 文件大小： | 477K |
| 代理商： | FDB6644S |
FDP6644S/FDB6644S Rev
D
(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 1mA
30
V
Breakdown Voltage Temperature
I
D
= 10mA, Referenced to 25
°
C
23
mV/
°
C
V
DS
= 24 V,
V
GS
= 16 V,
V
GS
= –16 V V
DS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
1
mA
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 1mA
I
D
= 10mA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 28 A
V
GS
= 4.5 V, I
D
= 25 A
V
GS
=10 V, I
D
=28 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 5 V,
I
D
= 28 A
1
1.3
3
V
Gate Threshold Voltage
–9.5
mV/
°
C
7
8
11.5
10
12
17
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
60
A
S
89
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2851
540
196
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
11
53
17
27
21
20
85
30
38
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
7
8
V
DS
= 15 V, I
D
= 28 A,
V
GS
= 5 V
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 28 A,
d
iF
/d
t
= 300 A/μs
I
S
= 3.5 A
I
S
= 7 A
(Note 1)
(Note 1)
0.48
0.6
21
34
0.7
V
nS
nC
(Note 2)
Notes:
1.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
2.
See “SyncFET Schottky body diode characteristics” below.
F
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相关代理商/技术参数 |
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