参数资料
型号: FDB8160_F085
厂商: Fairchild Semiconductor
文件页数: 5/7页
文件大小: 0K
描述: MOSFET N-CH 30V 80A D2PAK
标准包装: 800
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.8 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 243nC @ 10V
输入电容 (Ciss) @ Vds: 11825pF @ 15V
功率 - 最大: 254W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263(D2Pak)
包装: 带卷 (TR)
Typical Characteristics
3000
1000
100
100us
1000
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
SINGLE PULSE
TJ = MAX RATED
STARTING T J = 25 o C
1
TC = 25oC
OPERATION IN THIS
AREA MAY BE
1ms
10ms
10
STARTING T J = 150 o C
0.1
1
LIMITED BY rDS(on) 100ms DC
10 90
V DS , DRAIN TO SOURCE VOLTAGE (V)
1
0.01
0.1
1 10 100
t AV , TIME IN AVALANCHE (ms)
1000 5000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
120
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
160
120
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 20V
V GS = 10V
V GS = 7V
T J = -55 C
80
40
T J = 175 o C
o
80
40
V GS = 6V
V GS = 5V
V GS = 4.5V
V GS = 4V
T J = 25 o C
0
0
1 2 3 4 5 6
V GS , GATE TO SOURCE VOLTAGE (V)
7
0
0.0
0.5 1.0
V DS , DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
8
I D = 80A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.8
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
6
1.4
4
T J = 175 o C
1.2
1.0
2
0
4
T J = 25 o C
6 8
V GS , GATE TO SOURCE VOLTAGE ( V )
10
0.8
0.6
-80
I D = 80A
V GS = 10V
-40 0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C )
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8160_F085 Rev. C
5
www.fairchildsemi.com
相关PDF资料
PDF描述
167103J250A-F CAP FILM 10000PF 250VDC RADIAL
160683K400F-F CAP FILM 0.068UF 400VDC RADIAL
171154J630O-F CAP FILM 0.15UF 630VDC RADIAL
160473K400F-F CAP FILM 0.047UF 400VDC RADIAL
D105F471JO3 CAP MICA 470PF 1KV 5% RADIAL
相关代理商/技术参数
参数描述
FDB8441 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8441_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.5m??
FDB8441_F085 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8442 功能描述:MOSFET 40V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8442_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.9m??