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参数资料
| 型号： | FDB8870 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 160A TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 23A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.9 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 132nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5200pF @ 15V |
| 功率 - 最大： | 160W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 其它名称： | FDB8870FSDKR |
Electrical Characteristics T C = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
30
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
1.2
-
2.5
V
I D = 35A, V GS = 10V
-
0.0032 0.0039
r DS(ON)
Drain to Source On Resistance
I D = 35A, V GS = 4.5V
I D = 35A, V GS = 10V,
T J = 175 o C
-
-
0.0038 0.0044
0.0051 0.0065
?
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 15V, V GS = 0V,
f = 1MHz
V GS = 0.5V, f = 1MHz
V GS = 0V to 10V
-
-
-
-
-
5200
970
570
2.1
106
-
-
-
-
132
pF
pF
pF
?
nC
Q g(5)
Q g(TH)
Q gs
Q gs2
Q gd
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “ Miller ” Charge
V GS = 0V to 5V
V GS = 0V to 1V
V DD = 15V
I D = 35A
I g = 1.0mA
-
-
-
-
-
56
5.0
15
10
23
69
6.5
-
-
-
nC
nC
nC
nC
nC
Switching Characteristics
(V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
10
162
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 15V, I D = 35A
V GS = 10V, R GS = 3.3 ?
-
-
-
-
98
75
47
-
-
-
-
183
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 35A
I SD = 15A
I SD = 35A, dI SD /dt = 100A/ μ s
I SD = 35A, dI SD /dt = 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
37
21
V
V
ns
nC
Notes:
1: Package current limitation is 80A.
2: Starting T J = 25 ° C, L = 0.15mH, I AS = 64A, V DD = 27V, V GS = 10V.
3: Pulse width = 100s.
4
?200 8 Fairchild Semiconductor Corporation
FDB8870 Rev. A 3
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