参数资料
型号: FDC640P
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 20V 4.5A SSOT-6
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Design/Process Change 11/May/2007
Mold Compound Change 08/April/2008
产品目录绘图: MOSFET SuperSOT-6
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 53 毫欧 @ 4.5A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 13nC @ 4.5V
输入电容 (Ciss) @ Vds: 890pF @ 10V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-SSOT
包装: 标准包装
产品目录页面: 1602 (CN2011-ZH PDF)
其它名称: FDC640PDKR
Typical Characteristics
15
V GS = -4.5V
3
12
-3.5V
-3.0V
-2.5V
2.5
V GS = -2.0V
9
6
2
1.5
-2.5V
3
-2.0V
1
-3.0V
-3.5V
-4.0V
-4.5V
0
0
0.5
1
1.5
2
2.5
0.5
0
3
6
9
12
15
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
-I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
0.16
I D = -2.25 A
1.4
1.3
1.2
1.1
I D = -4.5 A
V GS = -4.5 V
0.14
0.12
0.1
T A = 125 o C
0.08
1
0.9
0.8
0.7
0.06
0.04
0.02
T A = 25 o C
-50
-25
0
25
50
75
100
125
150
1.5
2
2.5
3
3.5
4
4.5
5
T J , JUNCTION TEMPERATURE ( C)
o
Figure 3. On-Resistance Variation with
Temperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
12
10
V DS = -5V
T A = -55 o C
25 o C
125 o C
10
1
V GS = 0V
T A = 125 o C
8
6
0.1
25 o C
-55 o C
0.01
4
0.001
2
0
0.5
1
1.5
2
2.5
3
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC640P Rev E(W)
相关PDF资料
PDF描述
MX3AWT-A1-0000-0007E8 LED XLAMP WARM WHITE 350MA 2PLCC
MX3AWT-A1-0000-0007B9 LED XLAMP WARM WHITE 350MA 2PLCC
SFSD4096L1BN2TO-I-Q2-151-STD FLASH SECURE DGTL CARD SD 4G
MX3AWT-A1-0000-0007A9 LED XLAMP WARM WHITE 350MA 2PLCC
DPM500 LCD DPM 7.5-15V/200MV 3.5 DIGIT
相关代理商/技术参数
参数描述
FDC640P_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET
FDC640P_F095 功能描述:MOSFET 2.5V P-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC640P_NF073 制造商:Fairchild Semiconductor Corporation 功能描述:4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
FDC642 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC6420 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:20V N & P-Channel PowerTrench MOSFETs