参数资料
型号: FDD068AN03L
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз
中文描述: 17 A, 30 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: DPAK-3
文件页数: 5/11页
文件大小: 298K
代理商: FDD068AN03L
2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
0.1
1
10
30
5000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
50
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 35A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
相关PDF资料
PDF描述
FDD068AN03 N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз
FDU2572 N-Channel PowerTrench MOSFET 150V, 29A, 54mз
FDD2572 N-Channel PowerTrench MOSFET 150V, 29A, 54mз
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