参数资料
型号: FDD6030
厂商: Fairchild Semiconductor Corporation
英文描述: N-Channel PowerTrenchTM MOSFET
中文描述: N沟道MOSFET的PowerTrenchTM
文件页数: 5/6页
文件大小: 74K
代理商: FDD6030
FDD6030BL/FDU6030BL Rev. C(W)
Typical Characteristics
0
2
4
6
8
10
0
4
8
12
16
20
24
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 10A
V
DS
= 5V
15V
10V
0
400
800
1200
1600
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
R
DS(ON)
LIMIT
V
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1m
100μs
10s
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 96 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
相关PDF资料
PDF描述
FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDU6296 30V N-Channel Fast Switching PowerTrench? MOSFET
FDD6296 30V N-Channel Fast Switching PowerTrench? MOSFET
FDU6512A 30V N-Channel PowerTrench MOSFET
FDD6512A 30V N-Channel PowerTrench MOSFET
相关代理商/技术参数
参数描述
FDD6030BL 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6030L 功能描述:MOSFET 30V N&P-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6030L_03 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDD6030L_Q 功能描述:MOSFET 30V N&P-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6035 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrench MOSFET