型号: | FDD6644 |
厂商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分类: | JFETs |
英文描述: | 30V N-Channel PowerTrench MOSFET |
中文描述: | 67 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
封装: | DPAK-3 |
文件页数: | 5/6页 |
文件大小: | 84K |
代理商: | FDD6644 |
相关PDF资料 |
PDF描述 |
---|---|
FDU6680A | 30V N-Channel PowerTrench MOSFET |
FDU6680 | 30V N-Channel PowerTrench? MOSFET |
FDD6680 | N-Channel Logic Level PWM Optimized PowerTrench⑩ MOSFET |
FDD6680AS | 30V N-Channel PowerTrench SyncFET |
FDD6680AS_NL | 30V N-Channel PowerTrench SyncFET |
相关代理商/技术参数 |
参数描述 |
---|---|
FDD6644S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
FDD6670 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrench MOSFET |
FDD6670A | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
FDD6670A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 76A TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:3 ;RoHS Compliant: Yes |
FDD6670A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 66A, TO-252 |