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参数资料
| 型号： | FDD8882 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 55A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 33nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1260pF @ 15V |
| 功率 - 最大： | 55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 标准包装 |
| 其它名称： | FDD8882DKR |
Absolute Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V) (Note 1)
55
A
I D
Continuous (T C =
25 o C,
V GS = 4.5V) (Note 1)
50
A
Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 52 o C/W)
Pulsed
12.6
Figure 4
A
A
E AS
P D
T J , T STG
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
41
55
0.37
-55 to 175
mJ
W
W/ o C
o C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
2.73
100
o
o
C/W
C/W
R θ JA
Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area
52
o C/W
Package Marking and Ordering Information
Device Marking
FDD8882
FDU8882
Device
FDD8882
FDU8882
Package
TO-252AA
TO-251AA
Reel Size
13”
N/A (Tube)
Tape Width
12mm
N/A
Quantity
2500 units
75 units
F
F
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
30
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
1.2
-
2.5
V
I D = 35A, V GS = 10V
-
0.0094 0.0115
r DS(ON)
Drain to Source On Resistance
I D = 35A, V GS = 4.5V
I D = 35A, V GS = 10V,
T J = 175 o C
-
-
0.0130 0.0150
0.0150 0.0190
?
FDD8882/FDU8882 Rev. C
2
www.fairchildsemi.com
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| FDD8896_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 94A, 5.7m?? |
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