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参数资料
| 型号： | FDD8882 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 277K |
| 代理商： | FDD8882 |
2004 Fairchild Semiconductor Corporation
FDD8882/FDU8882 Rev. 1.0.0
November 2004
www.fairchildsemi.com
F
1
FDD8882 / FDU8882
N-Channel PowerTrench
MOSFET
30V, 55A, 11.5m
Features
!
r
DS(ON)
= 11.5m
, V
GS
= 10V, I
D
= 35A
!
r
DS(ON)
= 15m
, V
GS
= 4.5V, I
D
= 35A
!
High performance trench technology for extremely low
r
DS(ON)
!
Low gate charge
!
High power and current handling capability
Application
!
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
D-PAK
(TO-252)
相关PDF资料 |
PDF描述 |
|---|---|
| FDD8882_NL | N-Channel PowerTrench MOSFET |
| FDU8882_NL | N-Channel PowerTrench MOSFET |
| FDU8896 | N-Channel PowerTrench MOSFET |
| FDD8896 | N-Channel PowerTrench MOSFET |
| FDV301N | Digital FET , N-Channel |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD8882_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8882_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDD8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8896_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 94A, 5.7m?? |
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