参数资料
型号: FDLL457A
厂商: Fairchild Semiconductor
文件页数: 1/3页
文件大小: 109K
描述: DIODE HI CONDUCTANCE 70V LL-34
标准包装: 2,500
二极管类型: 标准
电压 - (Vr)(最大): 70V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 10mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 25nA @ 60V
电容@ Vr, F: 6pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: MELF(LL-34)
供应商设备封装: LL-34
包装: 带卷 (TR)
1N457A / FDLL457A — Small Signal Diode
? 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
1N457A / FDLL457A Rev. 1.1.0 1
April 2013
1N457A / FDLL457A
Small Signal Diode
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Measured on 8.3ms single half-sine wave or equivalent square wave. Duty cycle = 4 pulses per minute maximum.
Thermal Characteristics
Electrical Characteristics
Values are at TA
= 25°C unless otherwise noted.
Symbol Parameter Value Units
VRRM
Maximum Repetitive Reverse Voltage 70 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Current
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 μs4.0A
TSTG
Storage Temperature Range -65 to +200
°C
TJ
Operating Junction Temperature 175
°C
Symbol Parameter Value Units
PD
Power Dissipation 500 mW
RθJA
Thermal Resistance, Junction to Ambient 350
°C
Symbol Parameter Conditions Min. Max. Units
VR
Breakdown Voltage IR
= 100
μA85 V
VF
Forward Voltage
IF
= 10 mA 1.0 V
IF
= 100 mA 1.0 V
IR
Reverse Leakage
VR
= 60 V 25 nA
VR
= 60 V, T
A
= 150
°C5.0μA
CTTotal Capacitance VR
= 0, f = 1.0 MHz 6.0 pF
Cathode Band
SOD80
COLOR BAND MARKING
DEVICE
1ST BAND
FDLL457A WHITE
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