参数资料
型号: FDMS7692A
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 30V 13.5A POWER56
产品目录绘图: Power56 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 13.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 8 毫欧 @ 13A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 22nC @ 10V
输入电容 (Ciss) @ Vds: 1350pF @ 15V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-PQFN,Power56
供应商设备封装: Power56
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMS7692ADKR
Typical Characteristics T J = 25 °C unless otherwise noted
50
10
40
V GS = 10 V
V GS = 4.5 V
8
V GS = 3.0 V
PULSE DURATION = 80 μ s
V GS = 4.0 V
DUTY CYCLE = 0.5% MAX
30
V GS = 3.5 V
6
V GS = 3.5 V
20
10
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 3.0 V
4
2
V GS = 4.0 V
0
0
V GS = 4. 5 V
V GS = 10 V
0.0
0.5 1.0 1.5
2.0
0
10
20
30
40
50
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
30
1.5
1.4
I D = 13 A
V GS = 10 V
25
I D = 13 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.3
1.2
1.1
1.0
20
15
T J = 125 o C
10
0.9
0.8
-75
-50
-25
0
25
50
75
100 125 150
5
2
T J = 25 o C
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
50
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
V GS = 0 V
40
V DS = 5 V
10
30
20
T J = 150 o C
T J = 25 o C
1
T J = 150 o C
T J = 25 o C
10
0
T J = -55 o C
0.1
0.01
T J = -55 o C
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDMS7692A Rev . B
3
www.fairchildsemi.com
相关PDF资料
PDF描述
FDMS7692 MOSFET N-CH 30V 14A POWER56
FDMS7694 MOSFET N-CH 30V POWER56
FDMS7698 MOSFET N-CH 30V 13.5A POWER56
FDMS7700S MOSFET 2N-CH 30V POWER56
FDMS8018 MOSFET N-CH 30V 30A 8-PQFN
相关代理商/技术参数
参数描述
FDMS7694 功能描述:MOSFET 30V NCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMS7696A 制造商:Fairchild Semiconductor Corporation 功能描述:
FDMS7698 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMS7698_F065 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE PT7 NCH POWERTRENCH MOSFET IN PQFN5X6 - Tape and Reel
FDMS7700S 功能描述:MOSFET 30V Dual N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube