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参数资料
| 型号： | FDN359BN |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-Channel Logic Level PowerTrench TM MOSFET |
| 中文描述： | 2700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 102K |
| 代理商： | FDN359BN |
FDN359BN Rev A(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V,
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A,Referenced to 25
°
C
21
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
1
10
±
100
μ
A
μ
A
nA
T
J
= -55
O
C
I
GSS
Gate–Body Leakage
V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 2.7 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 5V,
I
D
= 2.7 A
I
D
= 250
μ
A
1
1.8
3
V
Gate Threshold Voltage
–4
mV/
°
C
I
D
= 2.7 A
I
D
= 2.4 A
0.026
0.032
0.033
11
0.046
0.060
0.075
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
15
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
485
105
65
1.8
650
140
100
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
7
5
20
2
5
1.3
1.8
14
10
35
4
7
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 2.7 A,
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDN359 | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN359AN | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN360 | Single P-Channel PowerTrenchTM MOSFET |
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN359BN"F095 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 0.026OHM 2.7A SUPER 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.026OHM, 2.7A, SUPER |
| FDN359BN_F095 | 功能描述:MOSFET 30V NCh; PowerTrench AU Wire Parts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359BN-F095 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN360 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel PowerTrenchTM MOSFET |
| FDN360P | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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