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参数资料
| 型号： | FDP20N50 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 20A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 230 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 59.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3120pF @ 25V |
| 功率 - 最大： | 250W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Part Number
FDP20N50
FDPF20N50
FDPF20N50T
Top Mark
FDP20N50
FDPF20N50
FDPF20N50
Package
TO-220
TO-220F
TO-220F
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 500 V, V GS = 0 V
V DS = 400 V, T C = 125 ° C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
500
--
--
--
--
--
--
0.5
--
--
--
--
--
--
1
10
100
-100
V
V/ ° C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 10 A
V DS = 40 V, I D = 10 A
3.0
--
--
--
0.20
24.6
5.0
0.23
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
2400
355
27
3120
465
--
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 250 V, I D = 20 A,
V GS = 10 V, R G = 25 Ω
V DS = 400 V, I D = 20 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
95
375
100
105
45.6
14.8
21.6
200
760
210
220
59.5
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
20
80
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 20 A
V GS = 0 V, I S = 20 A,
dI F /dt =100 A/ μ s
--
--
--
--
507
7.20
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.0 mH, I AS = 20 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 20 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2006 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 / FDPF20N50T Rev. C1
2
www.fairchildsemi.com
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