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参数资料
| 型号： | FDP20N50F |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 20A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 260 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 65nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3390pF @ 25V |
| 功率 - 最大： | 250W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
March 2013
FDP20N50F / FDPF20N50FT
N-Channel UniFET TM FRFET ? MOSFET ?
500 V, 20 A, 260 m ?
Features
? R DS(on) = 210 m ? (Typ.) @ V GS = 10 V, I D = 10 A
? Low Gate Charge (Typ. 50 nC)
? Low C rss (Typ. 27 pF)
? 100% Avalanche Aested
? Improve dv/dt Capability
? RoHS Compliant
Applications
? LCD/LED/PDP TV
? Lighting
Description
UniFET TM MOSFET is Fairchild Semiconductor ? ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET ? MOSFET has been enhanced by lifetime
control. Its t rr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
? Uninterruptible Power Supply
? AC-DC Power Supply
D
G
D
S
TO-220
G
D
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP20N50F
FDPF20N50FT
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
20
12.9
±30
20*
12.9*
V
A
I DM
E AS
I AR
E AR
dv/dt
P D
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
- Pulsed
(T C = 25 o C)
- Derate above 25 o C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
80
250
2.0
1110
20
25
20
80*
38.5
0.3
A
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R ? JC
Parameter
Thermal Resistance, Junction to Case, Max.
FDP20N50F
0.5
FDPF20N50FT
3.3
Unit
R ? CS
R ? JA
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
0.5
62.5
-
62.5
o
C/W
?2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
1
www.fairchildsemi.com
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| FDP22N50N | 功能描述:MOSFET UniFETII 500V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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