- 您现在的位置：买卖IC网 > PDF目录375779 > FDP2572 (Electronic Theatre Controls, Inc.) STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY PDF资料下载
参数资料
| 型号： | FDP2572 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 元件分类： | 运动控制电子 |
| 英文描述： | STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY |
| 中文描述： | 类立体声功率200W - T的数字音频放大器驱动程序使用数字功率处理技术 |
| 文件页数： | 2/11页 |
| 文件大小： | 269K |
| 代理商： | FDP2572 |
2002 Fairchild Semiconductor Corporation
FDB2572 / FDP2572 Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 0.2mH, I
AS
= 19A.
2:
Pulse Width = 100s
Device Marking
FDB2572
FDP2572
Device
FDB2572
FDP2572
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 120V
V
GS
= 0V
V
GS
=
±
20V
150
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
=9A, V
GS
=10V
I
D
= 4A, V
GS
= 6V,
I
D
=9A, V
GS
=10V, T
C
=175
o
C
2
-
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.045
0.050
0.126
0.054
0.075
0.146
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
1770
183
40
26
3.3
8
5
6
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 75V
I
D
= 9A
I
g
= 1.0mA
34
4.3
-
-
-
V
DD
= 75V, I
D
= 9A
V
GS
= 10V, R
GS
= 11.0
-
-
-
-
-
-
-
36
-
-
-
-
66
ns
ns
ns
ns
ns
ns
11
14
31
14
-
V
SD
Source to Drain Diode Voltage
I
SD
= 9A
I
SD
= 4A
I
SD
= 9A, dI
SD
/dt =100A/
μ
s
I
SD
= 9A, dI
SD
/dt =100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
74
169
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相关PDF资料 |
PDF描述 |
|---|---|
| FDB2572 | N-Channel PowerTrench MOSFET 150V, 29A, 54mз |
| FDP2614 | 200V N-Channel PowerTrench MOSFET |
| FDP2670 | 200V N-Channel PowerTrench MOSFET |
| FDB2670 | 200V N-Channel PowerTrench MOSFET |
| FDP33N25 | 250V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 150V, 29A, TO-220AB |
| FDP2572_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 150V, 29A, 54m?? |
| FDP2572_Q | 功能描述:MOSFET TO-220 N-CH 150V 29A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP2614 | 功能描述:MOSFET 200V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP2670 | 功能描述:MOSFET 200V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。