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参数资料
| 型号： | FDP3651U |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM |
| 中文描述： | 80 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 302K |
| 代理商： | FDP3651U |
F
FDP3651U Rev. A
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0
1
2
3
4
5
0
20
40
60
80
100
120
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 8V
V
GS
= 10V
V
GS
= 7V
V
GS
= 20V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
Current and Gate Voltage
0
20
40
60
80
100
120
0
1
2
3
4
5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 20V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
On-Resistance vs Drain
Figure 3.
-80
-40
0
40
80
120
160
200
0.4
0.8
1.2
1.6
2.0
2.4
2.8
I
D
= 80A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Normalized On Resistance vs Junction
Temperature
Figure 4.
8
10
12
14
16
18
20
0
10
20
30
40
50
60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 80A
R
D
,
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
2
4
6
8
10
0
20
40
60
80
100
120
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
1000
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
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相关代理商/技术参数 |
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|---|---|
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| FDP3672 | 功能描述:MOSFET 105V 41a 0.033 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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