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| 型号： | FDP3652 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 61A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 61A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 61A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 53nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2880pF @ 25V |
| 功率 - 最大： | 150W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 散装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Device Marking
FDB3652
FDP3652
Device
FDB3652
FDP3652
Package
D 2 -PAK
TO-220
Reel Size
330 mm
Tube
Tape Width
24 mm
N/A
Quantity
800 units
50 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
100
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 80V
V GS = 0V
V GS = ±20V
T C = 150 o C
-
-
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
-
4
V
I D = 61A, V GS = 10V
-
0.014
0.016
r DS(ON)
Drain to Source On Resistance
I D = 30A, V GS = 6V
I D = 61A, V GS = 10V,
T J = 175 o C
-
-
0.018
0.035
0.026
0.043
?
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
2880
390
100
41
-
-
-
53
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 50V
I D = 61A
I g = 1.0mA
-
-
-
-
5
15
10
10
6.5
-
-
-
nC
nC
nC
nC
Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
12
146
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 50V, I D = 61A
V GS = 10V, R GS = 6.8 ?
-
-
-
-
85
26
45
-
-
-
-
107
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 61A
I SD = 30A
I SD = 61A, dI SD /dt = 100A/ μ s
I SD = 61A, dI SD /dt = 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
62
45
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 0.228mH, I AS = 40A.
2: Pulse Width = 100s
? 2003 Fairchild Semiconductor Corporation
FDP3652 / FDB3652 Rev. C0
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP3652 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| FDP3652_NL | 制造商:Fairchild 功能描述:100V/61A N-CH MOSFET |
| FDP3652_Q | 功能描述:MOSFET 100V 61a 0.016 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP3672 | 功能描述:MOSFET 105V 41a 0.033 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP3672_NL | 制造商:Fairchild 功能描述:105V/41A N-CH MOSFET |
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