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参数资料
| 型号： | FDP61N20 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 61 A, 200 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 657K |
| 代理商： | FDP61N20 |
2005 Fairchild Semiconductor Corporation
FDP61N20 Rev. A
1
www.fairchildsemi.com
F
September 2005
UniFET
TM
FDP61N20
200V N-Channel MOSFET
Features
61A, 200V, R
DS(on)
= 0.041
@V
GS
= 10 V
Low gate charge ( typical 58 nC)
Low C
rss
( typical 80 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
{
{
S
{
z
z
z
D
G
TO-220
FCP Series
G
S
D
Symbol
Parameter
FDP61N20
Unit
V
DSS
I
D
Drain-Source Voltage
200
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
61
38.5
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
244
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1440
mJ
Avalanche Current
(Note 1)
61
A
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
417
3.3
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.3
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP61N20 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:MOSFET |
| FDP65N06 | 功能描述:MOSFET 60V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6644 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6644S | 功能描述:MOSFET 30V/16V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6670AL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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