参数资料
型号: FDP6644S
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 30V N-Channel PowerTrench SyncFET⑩
中文描述: 55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220, 3 PIN
文件页数: 5/6页
文件大小: 160K
代理商: FDP6644S
FDP6644S/FDB6644S Rev C1 (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6644S.
Figure 12. FDP6644S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6644).
Figure 13. Non-SyncFET (FDP6644) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.00001
0.0001
0.001
0.01
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 100
o
C
T
A
= 25
o
C
F
C
Time: 12.5ns/div
C
Time: 12.5ns/div
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相关代理商/技术参数
参数描述
FDP6670AL 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP6670AL_Q 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP6670AS 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDP6670AS_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDP6670AS_NL 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET