参数资料
型号: FDP6670AL
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel Logic Level PowerTrenchTM MOSFET
中文描述: 80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220, 3 PIN
文件页数: 3/5页
文件大小: 156K
代理商: FDP6670AL
FDP6670AL/FDB6670AL Rev D(W)
Typical Characteristics
0
25
50
75
100
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
3.0V
V
GS
= 10V
4.5V
3.5V
6.0V
4.0V
0.8
1
1.2
1.4
1.6
1.8
0
20
60
80
100
I
D
, D40
R
D
,
D
V
GS
= 3.5V
5.0V
6.0V
4.5V
4.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 80A
V
GS
=10V
0.005
0.009
0.013
0.017
0.021
2
4
8
10
V
GS
, GATE TO SO6
R
D
,
I
D
= 40A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
100
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
3.5
4
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 10V
0.001
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相关代理商/技术参数
参数描述
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FDP6670AS 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDP6670AS_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩
FDP6670AS_NL 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET
FDP6670S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube