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参数资料
| 型号： | FDR8521L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel MOSFET With Gate Driver For Load Switch Application |
| 中文描述： | 2900 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 224K |
| 代理商： | FDR8521L |
F
FDR8521L Rev. C
FDR8521L
P-Channel MOSFET With Gate Driver For Load Switch Application
General Description
This device is designed for configuration as a load switch
and is particularly suited for power management in por-
table battery powered electronic equipment. Designed to
operate from 3V to 20V input and supply up to 2.9A, the
device features a small N-Channel MOSFET (Q1) together
with a large P-Channel Power MOSFET (Q2) in a single
SO-8 package.
August 2000
Features
V
V
DROP
= 0.07 V @ V
DROP
= 0.115 V @ V
IN
= 12 V, I
IN
= 5 V, I
L
= 1 A.R
(ON)
= 0.07
L
= 1 A.R
(ON)
= 0.115
.
V
V
DROP
= 0.2 V @ V
DROP
= 0.2 V @ V
IN
= 12 V, I
IN
= 5 V,I
=2.9 A.R
(ON)
= 0.07
L
= 1.8 A.R
(ON)
= 0.115
.
Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6kV Human Body Model).
High density cell design for extremely low on-resistance.
2000 Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
IN
V
ON/OFF
I
D
Parameter
Ratings
3 - 20
2.5 - 8
2.9
8
0.8
-55 to +150
6
Units
V
V
A
Input Voltage Range
(Note 1)
On/Off Voltage Range
Load Current
- Continuous
- Pulsed
Maximum Power Dissipation
(Note 2)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human-Body-Model (100pf/1500 Ohm)
(Note 2)
P
D
T
J
, T
stg
ESD
W
°
C
kV
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 2)
Thermal Resistance, Junction-to-Case
(Note 2)
156
40
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
8521L
FDR8521L
13’’
12mm
3000 units
Applications
Power management
Load switch
IN
OUT
ON/OFF
EQUIVALENT CIRCUIT
V
DROP
+
-
SuperSOT -8
TM
pin
1
1
5
7
8
6
4
3
2
Q2
Q1
See Application Circuit
R
2
V
ON/OFF
R
1
,R
2
,C
1
V
OUT,
C
1,
C
O
C
1
,C
O
R
2
V
IN
,R
1
,C
i
V
OUT,
C
1,
C
O
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相关代理商/技术参数 |
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|---|---|
| FDR8521L_Q | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR856P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR858P | 功能描述:MOSFET SSOT-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR858P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR8702H | 功能描述:MOSFET N & PCh PowerTrench 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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