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参数资料
| 型号： | FDS4435BZ |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 Volt P-Channel PowerTrench MOSFET |
| 中文描述： | 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 637K |
| 代理商： | FDS4435BZ |
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Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 50
°
C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105
°
C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125
°
C/W on a minimum
mounting
pad.
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PDF描述 |
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| FDS4465 | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDS4470 | 40V N-Channel PowerTrench MOSFET |
| FDS4480 | 40V N-Channel PowerTrench MOSFET |
| FDS4488 | 30V N-Channel PowerTrench MOSFET |
| FDS4501H | Complementary PowerTrench Half-Bridge MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4435BZ | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -30V, 8.8A, SOIC |
| FDS4435BZ_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20mヘ |
| FDS4435BZ_F021 | 制造商:Fairchild Semiconductor Corporation 功能描述:FDS4435BZ Series -30 V -8.8 A P-Channel PowerTrench MOSFET - SOIC-8 |
| FDS4435BZ_F085 | 功能描述:MOSFET 30V P-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435BZ-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS4435BZ Series 30 V 20 mOhm SMT P-Channel PowerTrench Mosfet SOIC-8 |
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