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参数资料
| 型号： | FDS4685 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 40V P-Channel PowerTrench MOSFET |
| 中文描述： | 8200 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 506K |
| 代理商： | FDS4685 |
2
www.fairchildsemi.com
FDS4685 Rev. C(W)
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
θ
JA
JC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
θ
CA
is determined by the user's board design..
R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= –250
= 0 V, I
D
A, Referenced to 25
= –250
μ
A
–40
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
μ
°
C
–32
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –32 V, V
GS
= 0 V
–1
μ
A
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= –250
= V
GS
, I
D
= –250
μ
A
–1
–1.6
–3
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
μ
A, Referenced to 25
°
C
4.7
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
= –10 V, I
= –4.5 V, I
= –10 V, I
D
D
D
= –8.2 A
= –8.2 A
= –7 A
= –8.2 A, T
J
= 125
°
C
22
29
31
27
35
42
m
g
FS
Forward Transconductance
V
DS
= –5 V, I
D
22
S
Dynamic Characteristics
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= –20 V, V
GS
= 0 V,
1872
pF
C
oss
Output Capacitance
256
pF
C
rss
Reverse Transfer Capacitance
134
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1MHz
4
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= –20 V, I
= –10 V, R
D
= –1 A,
= 6
GEN
14
25
ns
t
r
Turn–On Rise Time
11
20
ns
t
d(off)
Turn–Off Delay Time
50
80
ns
t
f
Turn–Off Fall Time
18
32
ns
Q
g
Total Gate Charge
V
V
DS
GS
= –20 V, I
= –5 V
D
= –8.2 A,
19
27
nC
Q
gs
Gate–Source Charge
5.6
nC
Q
gd
Gate–Drain Charge
6.1
nC
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward Voltage
V
GS
= –8.2 A,
/d
t
= 100 A/μs
= 0 V, I
S
= –2.1 A (Note 2)
–0.7
–1.2
V
t
rr
Diode Reverse Recovery Time
I
d
F
iF
26
nS
Q
rr
Diode Reverse Recovery Charge
15
nC
a) 50°C/W when mounted
on a 1 in
pad of 2 oz
copper
b) 105°/W when mounted
on a .04 in
copper
pad of 2 oz
c) 125°/W when mounted
on a minimum pad.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4685 | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -40V 8.2mA |
| FDS4685-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS4685 Series 40 V 27 mOhm P-Channel PowerTrench Mosfet SOIC-8 |
| FDS4770 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4770 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS4770_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V N-Channel PowerTrench?MOSFET |
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