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参数资料
| 型号： | FDS6984S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 8.5 A, 30 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, SOIC-8 |
| 文件页数： | 1/9页 |
| 文件大小： | 552K |
| 代理商： | FDS6984S |
September 2000
2000 Fairchild Semiconductor Corporation
FDS6984S Rev C(W)
FDS6984S
Dual
Notebook
Power
Supply
N
-
Channel PowerTrench
SyncFET
General Description
The FDS6984S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6984S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
Q2
:
Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V
R
DS(on)
= 19 m
=
@ V
GS
= 10V
R
DS(on)
= 28 m
=
@ V
GS
= 4.5V
Q1
:
Optimized for low switching losses
Low gate charge ( 5 nC typical)
5.5A, 30V
R
DS(on)
= 0.040
=
@ V
GS
= 10V
R
DS(on)
= 0.055
=
@ V
GS
= 4.5V
S2
SO-8
G2S1G1
D2
D2
D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q2
Q1
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
30
±
20
8.5
30
30
±
20
5.5
20
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
1.6
1
0.9
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6984S
FDS6984S
Reel Size
13”
Tape width
12mm
Quantity
2500 units
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6984SQ1 | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6986AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6986S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6990S | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990 | Dual 30V N-Channel PowerTrench SyncFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6984S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6984S_Q | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6984SQ1 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6986 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS6986AS | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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