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参数资料
| 型号： | FDS7064A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 19 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | BOTTOMLESS, SO-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 79K |
| 代理商： | FDS7064A |
May 2000
ADVANCE INFORMATION
2000 Fairchild Semiconductor Corporation
FDS7064A Rev A1(W)
FDS7064A
30V N-Channel PowerTrench
ò
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS( ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
19 A, 30 V
R
DS(ON)
= 6.5 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
Bottomless
SO-8 package: Enhanced thermal
performance in industry-standard package size
D
S
SO-8
D
D
D
G
S
S
S
SSSG
D
Pin 1
Bottomless
SO-8
4
3
2
1
5
6
7
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
12
19
Units
V
V
A
(Note 1a)
60
3.9
P
D
(Note 1a)
W
°
C
–55 to +175
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
38
°
C/W
°
C/W
1
Package Marking and Ordering Information
Device Marking
Device
FDS7064A
FDS7064A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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| FDS7064N7 | 30V N-Channel PowerTrench MOSFET |
| FDS7066SN3 | 30V N-Channel PowerTrench SyncFET⑩ |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS7064N | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7064N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7064N7 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR POLARITY:NPN |
| FDS7064SN3 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7066ASN3 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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