参数资料
型号: FDS7064SN3
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 30V N-Channel PowerTrench SyncFET
中文描述: 16 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: FLMP, SO-8
文件页数: 5/7页
文件大小: 195K
代理商: FDS7064SN3
FDS7064SN3 Rev C1 (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 12 shows the reverse
recovery characteristic of the FDS7064SN3.
Figure 12. FDS7064SN3 SyncFET body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
T
A
= 25
o
C
T
A
= 100
o
C
Figure 13. SyncFET body diode reverse leakage
versus drain-source voltage and temperature
F
0
12.5 nS/div
相关PDF资料
PDF描述
FDS7064N7 30V N-Channel PowerTrench MOSFET
FDS7066SN3 30V N-Channel PowerTrench SyncFET⑩
FDS7066N3 30V N-Channel PowerTrench MOSFET
FDS7066ASN3 30V N-Channel PowerTrench SyncFET
FDS7066N7 30V N-Channel PowerTrench MOSFET
相关代理商/技术参数
参数描述
FDS7066ASN3 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS7066N3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS7066N7 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS7066N7_04 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET
FDS7066SN3 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube