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参数资料
| 型号： | FDS8874 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 16 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 1/11页 |
| 文件大小： | 2556K |
| 代理商： | FDS8874 |
August 2005
F
2005 Fairchild Semiconductor Corporation
FDS8874 Rev. A
www.fairchildsemi.com
1
FDS8874
N-Channel PowerTrench
MOSFET
30V, 16A, 5.5m
Features
r
DS(ON)
= 5.5m
, V
GS
= 10V, I
D
= 16A
r
DS(ON)
= 7.0m
, V
GS
= 4.5V, I
D
= 15A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
100% Rg tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
5
8
7
6
1
2
3
4
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
Drain to Source Voltage
V
GS
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θ
JA
= 50
o
C/W)
Pulsed
E
AS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
T
J
, T
STG
Operating and Storage Temperature
Thermal Characteristics
Package Marking and Ordering Information
Parameter
Ratings
30
±
20
Units
V
V
I
D
16
15
A
A
A
Figure 4
265
2.5
20
-55 to 150
mJ
W
P
D
mW/
o
C
o
C
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
25
50
85
o
C/W
o
C/W
o
C/W
Device Marking
FDS8874
Device
FDS8874
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8876 | N-Channel PowerTrench MOSFET |
| FDS8876_NL | N-Channel PowerTrench MOSFET |
| FDS8878 | N-Channel PowerTrench MOSFET |
| FDS8880 | N-Channel PowerTrench MOSFET |
| FDS8896 | N-Channel PowerTrench?? MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8874_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDS8876 | 功能描述:MOSFET 30V 12.5A 8.2 OHMS NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8876_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ |
| FDS8876_F123 | 功能描述:MOSFET 30V N-CHAN 12.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8876_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
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