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参数资料
| 型号： | FDS8878 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 10.2 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/12页 |
| 文件大小： | 634K |
| 代理商： | FDS8878 |
F
FDS8878 Rev. A1
www.fairchildsemi.com
2
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
V
GS(TH)
Dynamic Characteristics
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θ
JA
= 50
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
10.2
9.3
Figure 4
57
2.5
20
-55 to 150
A
A
A
E
AS
mJ
W
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
25
50
85
o
C/W
o
C/W
o
C/W
Device Marking
FDS8878
FDS8878
Device
FDS8878
Package
SO-8
SO-8
Reel Size
330mm
330mm
Tape Width
12mm
12mm
Quantity
2500 units
2500 units
FDS8878_NL (Note 4)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
A
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 10.2A, V
GS
= 10V
I
D
= 9.3A, V
GS
= 4.5V
I
D
= 10.2A, V
GS
= 10V,
T
A
= 150
o
C
1.2
-
-
-
2.5
0.014
0.017
V
r
DS(ON)
Drain to Source On Resistance
0.0110
0.0138
-
0.0175
0.0227
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
897
190
111
2.9
17
9
0.9
2.5
1.7
3.3
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
0.7
-
-
-
-
-
-
5.0
26
14
1.4
-
-
-
V
DD
= 15V
I
D
= 10.2A
I
g
= 1.0mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8878_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8878_F123 | 功能描述:MOSFET 30V N-CHAN 10.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8878_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDS8880 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8880 | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process |
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