参数资料
型号: FDS8934A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述: 4 A, 20 V, 0.065 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封装: SOIC-8
文件页数: 3/8页
文件大小: 417K
代理商: FDS8934A
FDS8934A Rev.B
0
4
8
12
16
20
0.5
1
1.5
2
2.5
3
- I , DRAIN CURRENT (A)
D
V = -1.5V
R
D
-2.5V
-2.0V
-4.5V
-3.0V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -4.5V
I = -4.0A
Figure 3. On-Resistance Variation with
Temperature
.
0.4
0.8
-V , GATE TO SOURCE VOLTAGE (V)
1.2
1.6
2
0
2
4
6
8
10
-
V = -5V
D
125°C
25°C
T = -55°C
Figure 5. Transfer Characteristics
.
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.001
0.01
0.1
1
3
10
-
25°C
-55°C
V = 0V
S
T =125°C
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0
1
2
3
4
5
0
0.05
0.1
0.15
0.2
-V , GATE TO SOURCE VOLTAGE (V)
R
D
25°C
I = -2A
T = 125°C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0
5
10
15
20
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
-2.0V
-2.5V
-3.0V
V = -4.5V
-1.5V
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