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参数资料
| 型号： | FDS9431 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 2.5V Specified MOSFET |
| 中文描述： | P沟道MOSFET的2.5V的指定 |
| 文件页数： | 1/8页 |
| 文件大小： | 204K |
| 代理商： | FDS9431 |
F
FDS9431A Rev. A2
Features
-3.5 A, -20 V. R
DS(ON)
= 0.130
@ V
GS
= -4.5 V
R
DS(ON)
= 0.180
@ V
GS
= -2.5 V.
Fast switching speed.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
September 1999
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
-20
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
8
- Continuous
- Pulsed
(Note 1a)
-3.5
-18
2.5
1.2
1.0
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
P
D
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
50
25
C/W
C/W
Package Marking and Ordering Information
Device Marking
Device
FDS9431A
FDS9431A
Reel Size
13
’’
Tape width
12mm
Quantity
2500 units
FDS9431A
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Applications
DC/DC converter
Power management
Load switch
Battery protection
S
D
S
S
SO-8
D
D
D
G
5
6
8
3
1
7
4
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS9431A | 功能描述:MOSFET SO-8 SGL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9431A_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified MOSFET |
| FDS9431A_F085 | 功能描述:MOSFET SO8 SINGLE PCH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9435A | 功能描述:MOSFET SO-8 SGL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9435A_Q | 功能描述:MOSFET SO-8 SGL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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