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参数资料
| 型号： | FDU6644 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 67 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | IPAK-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 84K |
| 代理商： | FDU6644 |
FDD/FDU6644 Rev C(W)
D
R
P
DS(ON)
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
3.2
A
V
SD
V
GS
= 0 V,
I
S
= 2.7 A
(Note 2)
0.7
1.2
V
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 40°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
θ
JA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
F
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