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参数资料
| 型号： | FDU6692 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 54 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | IPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 84K |
| 代理商： | FDU6692 |
April 2001
FDD6692/FDU6692
30V N-Channel PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDD/FDU6692 Rev C(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Motor drives
Features
54 A, 30 V.
R
DS(ON)
= 12 m
@ V
GS
= 10 V
R
DS(ON)
= 14.5 m
@ V
GS
= 4.5 V
Low gate charge (18 nC typical)
Fast switching
High performance trench technology for extremely
low R
DS(ON)
G
S
D
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
16
54
162
57
3.8
1.6
-55 to +175
Units
V
V
A
W
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
P
D
(Note 1b)
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
2.6
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD6692
FDD6692
FDU6692
FDU6692
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDU6692_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU6696 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU6696_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU6776A_F071 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench? MOSFET 25 V, 7.5 mΩ |
| FDU6780A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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