- 您现在的位置：买卖IC网 > PDF目录18450 > FDU6N50TU (Fairchild Semiconductor)MOSFET N-CH 500V 6A IPAK PDF资料下载
参数资料
| 型号： | FDU6N50TU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 6A IPAK |
| 标准包装： | 70 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 900 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 940pF @ 25V |
| 功率 - 最大： | 89W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
November 2013
FDD6N50 / FDU6N50
N-Channel UniFET TM MOSFET
500 V, 6 A, 900 m Ω
Features
? R DS(on) = 900 m Ω (Max.) @ V GS = 10 V, I D = 3 A
? Low Gate Charge (Typ. 12.8 nC)
? Low C rss (Typ. 9 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D-PAK
G
D
S
I-PAK
G
Absolute Maximum Ratings
T C = 25 o C unless otherwise noted.
S
FDD6N50TM /
FDD6N50TM_WS /
Symbol
V DSS
Drain-Source Voltage
Parameter
FDU6N50TU
500
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
6
3.8
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
24
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
270
6
8.9
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
89
0.71
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for
5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
FDD6N50TM /
FDD6N50TM_WS /
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDU6N50TU
1.4
83
Unit
° C/W
?2006 Fairchild Semiconductor Corporation
FDD6N50 / FDU6N50 Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| PB-12331CG | SWITCH PUSHBUTTON SPDT 6A 125V |
| ASG-C-V-B-106.250MHZ | OSC 106.250 MHZ 2.5V LVCMOS SMD |
| PL206705X | SWITCH PUSHBUTTON DPDT 2A 125V |
| FXO-HC730-25.125 | OSC 25.125 MHZ 3.3V HCMOS SMD |
| PL106705X | SWITCH PUSHBUTTON DPDT 2A 125V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDU7030BL | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU7030BL_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU7N20 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
| FDU7N60NZTU | 功能描述:MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU8580 | 功能描述:MOSFET 20V 35A 9 OHM NCH POWER TRENC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。