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参数资料
| 型号： | FDV303N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Digital FET, N-Channel |
| 中文描述： | 680 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 65K |
| 代理商： | FDV303N |
August 1997
FDV303N
Digital FET, N-Channel
General Description
Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDV303N
Units
V
DSS
V
GSS
Drain-Source Voltage, Power Supply Voltage
25
V
Gate-Source Voltage, V
IN
Drain/Output Current
8
V
I
D
- Continuous
0.68
A
- Pulsed
2
P
D
Maximum Power Dissipation
0.35
W
T
J
,T
STG
ESD
Operating and Storage Temperature Range
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
357
°C/W
FDV303N Rev.D1
25 V, 0.68 A continuous, 2 A Peak.
R
DS(ON)
= 0.45
@ V
GS
= 4.5 V
R
DS(ON)
= 0.6
@ V
GS
= 2.7 V
.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
Alternative to TN0200T and TN0201T.
These N-Channel enhancement mode field effect transistors are
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery circuits using either
one lithium or three cadmium or NMH cells. It can be used as an
inverter or for high-efficiency miniature discrete DC/DC
conversion in compact portable electronic devices like cellular
phones and pagers. This device has excellent on-state
resistance even at gate drive voltages as low as 2.5 volts.
Mark:303
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
D
G
S
1997 Fairchild Semiconductor Corporation
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV303N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N DIGITAL SOT-23 |
| FDV303N_NB9U008 | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303N_Q | 功能描述:MOSFET N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV303NFSC | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDV303NNB9U008 | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R |
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