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参数资料
| 型号： | FDW2502P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | CAP CER 3.3UF 16V 20% X7R 1210 |
| 中文描述： | 4400 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封装： | TSSOP-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 451K |
| 代理商： | FDW2502P |
May 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDW2502P Rev. C1 (W)
FDW2502P
Dual P-Channel 2.5V Specified PowerTrench
ò
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V –12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
–4.4 A, –20 V. R
DS(ON)
= 0.035
@ V
GS
= –4.5 V
R
DS(ON)
= 0.057
@ V
GS
= –2.5 V.
Extended V
GSS
range (±12V) for battery applications.
High performance trench technology for extremely
low R
DS(ON)
.
Low profile TSSOP-8 package.
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Ratings
–20
±
12
–4.4
–30
Units
V
V
A
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
1.0
0.6
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
125
208
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2502P
FDW2502P
13’’
12mm
3000 units
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDW2502PZ | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2503NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2503 | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2503N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2504 | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDW2502P_03 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2502P_Q | 功能描述:MOSFET TSSOP-8 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDW2502PZ | 功能描述:MOSFET TSSOP-8 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDW2503 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2503N | 功能描述:MOSFET TSSOP-8 N-CH DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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