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参数资料
| 型号： | FDZ5047N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel Logic Level PowerTrench BGA MOSFET |
| 中文描述： | 22 A, 30 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ULTRA THIN, BGA-36 |
| 文件页数： | 1/6页 |
| 文件大小： | 211K |
| 代理商： | FDZ5047N |
January 2004
2004 Fairchild Semiconductor Corporation.
FDZ5047N Rev D4 (W)
FDZ5047N
30V N-Channel Logic Level PowerTrench
BGA MOSFET
General Description
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ5047N
minimizes both PCB space and R
DS(ON)
. This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications resulting in DC/DC power supply
designs with higher overall efficiency.
Applications
DC/DC converters
Solenoid drive
Features
22 A, 30 V.
R
DS(ON)
= 2.9 m
@ V
GS
= 10 V
R
DS(ON)
= 4.5 m
@ V
GS
= 4.5 V
Occupies only 27.5 mm
2
of PCB area:
1/5 of the area of a TO-220 package
Ultra-thin package: less than 0.90 mm height when
mounted to PCB
Outstanding thermal transfer characteristics
Ultra-low gate charge x R
DS(ON)
product
Pin 1
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
S
S
S
S
G
S
S
S
S
D
S
S
S
S
S
D
S
S
S
S
S
Bottom
F
Pin 1
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Ratings
30
±
20
22
75
2.8
–50 to +150
Units
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Total Power Dissipation @ T
A
= 25
°
C
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
44
2.7
0.3
°
C/W
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
5047N
FDZ5047N
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDZ5047N_Q | 功能描述:MOSFET 30V/20V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-Z50HW | 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:FIBER FLAT DIFFUSE REFLECT R1 制造商:Panasonic Electric Works 功能描述:SENSOR, FIBRE OPTIC, REFLECTIVE, 650MM; Fiber Optic Sensor Type:Reflective; Sensing Range Max:650mm; Sensing Range:10mm to 650mm |
| FDZ661PZ | 功能描述:MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ663P | 功能描述:MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ7064AS | 功能描述:MOSFET 30V/12V NCh SYNCFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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