参数资料
| 型号： | FEB212 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/16页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR FSFR2100 |
| 标准包装： | 1 |
| 主要目的： | AC/DC，主面 |
| 输出及类型： | 1，隔离 |
| 功率 - 输出： | 192W |
| 输出电压： | 24V |
| 电流 - 输出： | 8A |
| 输入电压： | 340 ~ 400V |
| 稳压器拓扑结构： | 回扫 |
| 频率 - 开关： | 300kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | FSFR2100 |
| 相关产品： | FSFR2100-ND - IC SWIT PROG OVP OCP 9SIP |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. T A =25 ? C unless otherwise specified.
Symbol
V DS
LV CC
Parameter
Maximum Drain-to-Source Voltage (V DL -V CTR and V CTR -PG)
Low-Side Supply Voltage
Min.
600
-0.3
Max.
25.0
Unit
V
V
HV CC to V CTR High-Side V CC Pin to Low-side Drain Voltage
-0.3
25.0
V
Total Power Dissipation
HV CC
V CON
V CS
V RT
dV CTR /dt
P D
T J
T STG
High-Side Floating Supply Voltage
Control Pin Input Voltage
Current Sense (CS) Pin Input Voltage
R T Pin Input Voltage
Allowable Low-Side MOSFET Drain Voltage Slew Rate
(3)
Maximum Junction Temperature (4)
Recommended Operating Junction Temperature (4)
Storage Temperature Range
-0.3
-0.3
-5.0
-0.3
-40
-55
625.0
LV CC
1.0
5.0
50
12
+150
+130
+150
V
V
V
V
V/ns
W
? C
? C
MOSFET Section
Drain Current Pulsed
V DGR
V GS
I DM
Drain Gate Voltage (R GS =1 M ? )
Gate Source (GND) Voltage
(5)
600
±30
33
V
V
A
I D
Continuous Drain Current
T C =25 ? C
T C =100 ? C
11
7
A
Package Section
Torque
Recommended Screw Torque
5~7
kgf·cm
Notes:
3. Per MOSFET when both MOSFETs are conducting.
4. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
5. Pulse width is limited by maximum junction temperature.
Thermal Impedance
T A =25 ? C unless otherwise specified.
Symbol
θ JC
θ JA
Parameter
Junction-to-Case Center Thermal Impedance (Both MOSFETs Conducting)
Junction-to-Ambient Thermal Impedance
Value
10.44
80
Unit
oC/W
oC/W
? 2010 Fairchild Semiconductor Corporation
FSFR2100 ? Rev.1.1.0
4
www.fairchildsemi.com
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